1/<i>f</i> noise characterization of <i>n</i>+–<i>p</i> and <i>n</i>–<i>i</i>–<i>p</i> Hg1−<i>x</i>Cd<i>x</i>Te detectors

Abstract

1/f noise in n+–p and n–i–p Hg1−xCdxTe photodiodes is discussed. The n+–p diodes have coherent-state 1/f noise or umklapp 1/f noise. The n–i–p diodes have much lower values for the Hooge parameter αH and their noise is probably due to generation–recombination-type (trapping) 1/f noise.