Applied Physics Letters · 2007 · 43 citations · 24 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials PhysicsSemiconductor MaterialsMetal OxidesOptical Properties Of SemiconductorsOptical Properties Of SolidsOxide SemiconductorsSemiconductor NanomaterialsSulfur OxidesBand BendingBand GapBand Gap EnergyCalcinationGas SensingOptical Band GapOxygen VacanciesTin Oxides
The effect of In doping concentration on the optical band gap of nano-SnO2 is investigated as a function of calcination temperature. Changes in the band gap explain the room temperature H2 gas sensing of doped nano-SnO2. The band gap was found to be lower than those reported for SnO2 (3.6eV) from 2.55to3.43eV and may be explained by the presence of nonequilibrium oxygen vacancies in the oxide lattice and band bending effects at the nanoscale.
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