Physical review. B, Solid state · 1976 · 40 citations · 12 references
Natural SciencesMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceSemiconductor SurfacesSurface MagnetismSurface PhysicsTerahertz SpectroscopyElectron DensityResonance FrequenciesSilicon PhysicsSilicon Surface Science
Cyclotron resonance on the (100) surface of Si is investigated at frequencies between 94 and 891 GHz. The cyclotron mass, especially its dependence on surface electron density, is found to be independent of frequency in our samples. An increase of the scattering rate with magnetic field is observed.
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Cyclotron Resonance of Electrons in an Inversion Layer on Si
G. Abstreiter, P. Kneschaurek, J. P. Kotthaus et al. · Physical Review Letters · 1974 · 102 citations
Cyclotron Resonance of Localized Electrons on a Si Surface
J. P. Kotthaus, G. Abstreiter, J. F. Koch et al. · Physical Review Letters · 1975 · 89 citations