Electronic analog of the electro-optic modulator

Supriyo Datta, Biswajit Das

Applied Physics Letters

EngineeringElectro-optic Light ModulatorOptical ModulationSpin DynamicSpin Phenomenon +14

Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor

A. Fert, H. Jaffrès

Physical review. B, Condensed matter

EngineeringFerromagnetic MetalMagnetic ResonanceSpintronic MaterialSpin Dynamic +16

Electronic measurement and control of spin transport in silicon

Ian Appelbaum, Biqin Huang, D. J. Monsma

Nature

SpintronicsEngineeringPhysicsApplied PhysicsMagnetic Resonance +3

Electrical detection of spin precession in a metallic mesoscopic spin valve

F. J. Jedema, H. B. Heersche, A. T. Filip, +2

Nature

SpintronicsElectrical EngineeringMagnetismEngineeringPhysics +7

Electrical creation of spin polarization in silicon at room temperature

Saroj P. Dash, Sandeep Sharma, R. S. Patel, +2

Nature

MagnetismElectrical EngineeringSpintronicsEngineeringPhysics +6

A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

Applied Physics Letters

Magnetic PropertiesEngineeringSpintronic MaterialSpin DynamicMagnetic Materials +17

Tunneling Anisotropic Magnetoresistance: A Spin-Valve-Like Tunnel Magnetoresistance Using a Single Magnetic Layer

C. Gould, C. Rüster, T. Jungwirth, +6

Physical Review Letters

EngineeringMagnetic ResonanceSpintronic MaterialSpin-valve-like Tunnel MagnetoresistanceMagnetic Materials +20

Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry

O.M.J. van ‘t Erve, Aubrey T. Hanbicki, M. Holub, +4

Applied Physics Letters

Spin-polarized CarriersSpintronicsElectrical EngineeringMagnetismEngineering +13

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

Tomonori Nishimura, Koji Kita, Akira Toriumi

Applied Physics Express

EngineeringImpurity DopingSemiconductor DeviceFermi Level PinningSemiconductors +20

Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor

Michaël Tran, H. Jaffrès, C. Deranlot, +4

Physical Review Letters