Wavelength Tuning of GaAs/AlGaAs Quantum-Well Infrared Photo-detectors by Proton Implantation Induced Intermixing

X. Q. Liu, N. Li, Wei Lü, N. Li, Xianzhang Yuan, S. C. Shen, Lan Fu, Hark Hoe Tan, C. Jagadish

Japanese Journal of Applied Physics · 2000 · 11 citations · 16 references

Concepts

Abstract

Proton implantation induced intermixing was used to tune the quantum well infrared photo-detector (QWIP) response wavelength, which may provide a method of fabricating two-color QWIP devices. Obvious red shift of response wavelength as large as 0.6 µm was observed relative to the reference sample that was annealed without implantation, from 7.7 µm to 8.3 µm. Two response wavelengths for the highest-dose implanted sample were observed in the photo-current spectra. In the highest dose case (5×10 15 H/cm 2 ), the dark current increased by an order of magnitude and peak responsivity decreased by a factor of 3 for the implanted and annealed sample. This has been attributed to the raising of the ground state energy level in the intermixed quantum well and residual damage in the implanted and annealed QWIPs.

References

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