Oxidation of silicon in an electron cyclotron resonance oxygen plasma: Kinetics, physicochemical, and electrical properties

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation D. A. Carl, D. W. Hess, M. A. Lieberman; Oxidation of silicon in an electron cyclotron resonance oxygen plasma: Kinetics, physicochemical, and electrical properties. J. Vac. Sci. Technol. A 1 May 1990; 8 (3): 2924–2930. https://doi.org/10.1116/1.576607 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science & Technology A Search Advanced Search |Citation Search