Japanese Journal of Applied Physics · 1964 · 17 citations · 2 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials CharacterizationThin FilmsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin Film Magnetic PropertiesThin-film MaterialsAnnealing Temperature EffectsCarrier MobilityCharge Carrier MobilityCrystallite Size AnalysisCrystallite Size DeterminationMagnetoresistanceMean Free PathTransport In Thin Films
The correlation between crystallite size and carrier mobility of indium antimonide films deposited in a vacuum on glass substrates was studied. The crystallite size was determined from the X-ray diffraction profile, while the carrier mobility was deduced from a d.c. measurement of the transverse magnetoresistance effect. The data obtained from 50 specimens revealed the existence of a threshold crystallite size for a high mobility film and that the threshold value of this dimension is of the same order of magnitude as the mean free path of the electrons, i.e. , 1000Å, Some effects of annealing the film on the crystallite size were also investigated.
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Annealing Effects in Evaporated InSb Films
E. Brock Dale, Gerard Senecal · Journal of Applied Physics · 1962 · 14 citations