Physical Review Letters · 2003 · 39 citations · 25 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSolid State PhysicsSurface ScienceElectron DiffractionLow-energy Electron DiffractionPhase TransitionsSilicon MaterialsSurface Phase TransitionsSurface PhysicsDiffraction Pattern AnalysisElectron Diffraction Of SurfacesIntensity I-v AnalysisSilicon Surface ScienceTemperature DependenceTemperature-dependent Diffraction
The phase transition of Si(001) surface below 40 K was studied by low-energy electron diffraction (LEED). The temperature dependence of the intensities and widths of the quarter order diffraction spots and LEED intensity versus electron energy curves (I-V curves) were obtained in the temperature region from 20 to 300 K. While the spot intensities of the quarter order spots decrease and the widths broaden, the I-V curves do not change so much below 40 K. This clearly shows that a phase transition occurs from an ordered phase above 40 K to a disordered phase below 40 K.
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Reliability factors for LEED calculations
J. B. Pendry · Journal of Physics C Solid State Physics · 1980 · 1.1K citations
Atomic and Electronic Structures of Reconstructed Si(100) Surfaces
D. J. Chadi · Physical Review Letters · 1979 · 1.1K citations