Concepedia

Microstructure and electrical properties of XInZnO (X=Ti, Zr, Hf) films and device performance of their thin film transistors—The effects of employing Group IV-B elements in place of Ga

Mi Ran Moon, Haseok Jeon, Sekwon Na, Sun-Ho Kim, Donggeun Jung, Hyoungsub Kim, Hoo-Jeong Lee

Journal of Alloys and Compounds · 2013 · 12 citations · 14 references

DOI

Concepts

References

14

Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

Joon Seok Park, W. J. Maeng, Hyun‐Suk Kim et al. · Thin Solid Films · 2011 · 1K citations

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Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

Hideo Hosono · Journal of Non-Crystalline Solids · 2006 · 885 citations

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Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature

Elvira Fortunato, Pedro Barquinha, Ana Pimentel et al. · Advanced Materials · 2005 · 835 citations

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Hai Q. Chiang, John F. Wager, Randy Hoffman et al. · Applied Physics Letters · 2004 · 784 citations

, , +14

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

A. Suresh, John F. Muth · Applied Physics Letters · 2008 · 617 citations

, , +12