Effect of Pressure on the Electrical Properties of Indium Antimonide

Abstract

The electrical resistivity and Hall coefficient of indium antimonide have been measured as a function of pressure to 2000 atmospheres at 0\ifmmode^\circ\else\textdegree\fi{}C, 24.3\ifmmode^\circ\else\textdegree\fi{}C, and 54.3\ifmmode^\circ\else\textdegree\fi{}C. The sample was $p$-type at low temperatures and became intrinsic with respect to the type of conductivity-temperature variation at about 220\ifmmode^\circ\else\textdegree\fi{}K. It was found that the resistivity and Hall coefficient both increase exponentially with pressure, but at different rates, the resistivity curves having the greater slopes. The experimental results indicate an increase in the energy gap of 14.2\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}6}$ ev/atmosphere and a decrease in the electron mobility of 14 percent for 2000 atmospheres pressure at room temperature.