Applied Physics Letters · 1995 · 42 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsThin FilmsMos CapacitorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesCadmium SulfideCapacitanceIndium PhosphideMetal-semiconductor InterfacesPassivation LayersSemiconductor CharacterizationSilicon DioxideThin Oxide Layers
The electrical properties of the silicon dioxide/n-type (100) InP interface were significantly improved by thin interlayers of chemical bath deposited CdS. The CdS layer and CdS/InP interface were investigated with x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). XPS data showed reduction of native oxides and the prevention of subsequent substrate oxide growth following CdS layer deposition. PL spectra, measured between 1.0 and 1.3 μm, indicate a reduction in phosphorus vacancies. Metal–insulator–semiconductor (MIS) capacitors fabricated with CdS-treated InP substrates displayed interface-state densities below 1×1011 eV−1 cm−2 when determined from the difference between the high- and low-frequency capacitance data.