IEEE Photonics Technology Letters · 2004 · 46 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesElectro-optic EffectsElectro-optic MaterialsOptical ModulatorsQuantum OptoelectronicsQuantum Well DevicesQuantum WellsContrast RatioElectro-absorption ModulationElectro-absorption ModulatorsElectroabsorption ModulationElectroabsorption ModulatorsOperating VoltageQuantum Well HeterostructuresSemiconductor Optical Modulators
We demonstrate a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator that provides optical modulation with a contrast ratio in excess of 1.5 at only 6 V. The device operates at 1.55 μm and is based on a novel strain-balanced layer structure. The operating voltage is about two times lower than that of a conventional square quantum-well modulator that achieves a comparable contrast ratio.
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Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides
Md. Nazrul Islam, R. L. Hillman, David A. B. Miller et al. · Applied Physics Letters · 1987 · 155 citations