Symmetric and Asymmetric Ostwald Ripening in the Fabrication of Homogeneous Core–Shell Semiconductors

Abstract

Two methodic concepts, symmetric and asymmetric Ostwald ripening, are elucidated by solution-route syntheses of oxide and sulfide semiconductors. While the original shape of a crystallite aggregate forms the exterior appearance, the preorganization of the crystallites determines the ultimate interior space structure of the aggregate upon Ostwald ripening. Further investigations on the design of crystallite preorganization and control of the solution process will allow the construction of complex architectures, including nonspherical configurations.