Applied Physics Letters · 1992 · 35 citations · 14 references
Natural SciencesMaterials SciencePhysicsOptical MaterialsSolid State PhysicsThin FilmsEpitaxial GrowthFerroelectric MaterialsOptical CeramicsOptical Properties Of SolidsOptical Thin FilmsThin Film Optical PropertiesBand GapEpitaxial Growth MorphologyEpitaxial MaterialsFerroelectric PropertiesFerroelectric Thin FilmsOptical Band GapThin Film FerroelectricsX-ray Diffraction Analysis
This letter reports and discusses the observation of sol-gel solid phase epitaxy (SPE) of (110) Pb0.99Nb0.02(Zr0.52Ti0.48)0.98O3 or PNZT(2/52/48) on 3 in. diam (011̄2) sapphire. The epitaxial nature (with at least single crystal-like texture) of these films was ascertained by HRTEM and x-ray diffraction studies, including pole figure analysis. Such PNZT thin films (0.6 μm) were transparent to wavelengths between 0.4 and 5.6 μm, and exhibited an optical band gap and a refractive index (at 0.6328 μm), of 3.6 eV and 2.5–2.6, respectively.
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Stress-related problems in silicon technology
S. M. Hu · Journal of Applied Physics · 1991 · 499 citations