Spatial modes of a concentric-circle-grating surface-emitting, AlGaAs/GaAs quantum well semiconductor laser

Abstract

We demonstrate the fabrication and operation of an AlGaAs surface-emitting semiconductor laser, grown by molecular-beam epitaxy, that incorporates a circularly symmetric grating of period Λ=0.25 μm fabricated using electron-beam lithography. Azimuthal variations in the grating linewidth have a significant impact on the spatial modes of the laser.