Microwave performance of SOI n-MOSFETs and coplanar waveguides

Abstract

The microwave performance of 1- mu m gate-length n-MOSFETs fabricated on both SIMOX and BESOI substrates was measured. The process included a self-aligned silicide in an otherwise conventional MOS sequence. Initial optimization yielded devices with an f/sub max/ of 14 GHz on BESOI and 11 GHz on SIMOX. Coplanar waveguides (CPWs) were fabricated on substrates with resistivities from 4 to 4000 Omega -cm. A loss of 1.8 dB/cm at 2 GHz was demonstrated on the 4000- Omega -cm float-zone substrate.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>