IEEE Electron Device Letters · 1991 · 50 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave MaterialsMicrowave MeasurementsMicrowave Semiconductor DevicesCoplanar WaveguidesMicrowave Integrated Circuit DesignMicrowave SubstratesMonolithic Microwave Integrated CircuitsPlanar Microwave CircuitsSilicide ContactsSubstrate EngineeringSubstrate Integrated Circuits
The microwave performance of 1- mu m gate-length n-MOSFETs fabricated on both SIMOX and BESOI substrates was measured. The process included a self-aligned silicide in an otherwise conventional MOS sequence. Initial optimization yielded devices with an f/sub max/ of 14 GHz on BESOI and 11 GHz on SIMOX. Coplanar waveguides (CPWs) were fabricated on substrates with resistivities from 4 to 4000 Omega -cm. A loss of 1.8 dB/cm at 2 GHz was demonstrated on the 4000- Omega -cm float-zone substrate.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Bonding of silicon wafers for silicon-on-insulator
W. Maszara, Georges Goetz, A.L. Caviglia et al. · Journal of Applied Physics · 1988 · 861 citations
Ultra-high speed CMOS circuits in thin SIMOX films
Avid Kamgar, S.J. Hillenius, H.-I. Cong et al. · 2003 · 14 citations
Engineering, Computer Engineering, Electrical Engineering +17