IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2011 · 13 citations · 6 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsMicrowave EngineeringCmos Circuit DesignMixed-signal Integrated Circuit DesignPower AmplifiersRadio-frequency Integrated CircuitsUltra-wideband CommunicationWireless Power TransferAutomatic Power ControlCmos Radio-frequency CircuitsPower Amplifier StagesRf Cmos DesignRf Power ManagementTransmit Power ControlTransmitter DesignTransmitter Front-ends
This paper presents a highly-integrated 3-8 GHz ultra-wideband (UWB) RF transmitter implemented in a 1.2 V 0.13m CMOS technology. The transmitter integrates an analog baseband (PGAs and filter), an IQ modulator, a variable gain amplifier (VGA), a differential-to-single-ended amplifier, a power amplifier, as well as a transmitted signal strength indicator (TSSI). The RF VGA and the TSSI cooperate to perform an automatic transmit power control. The IQ modulator and an off-chip digital circuit implemented by a FPGA perform a carrier leakage calibration. Measured maximum output power and OP1 dB are -5 and +1.5 dBm, respectively. Measured worst carrier leakage suppression is 21 dB (before calibration) at 6.6 GHz. Measured worst sideband suppression is 29.1 dB at 7.6 GHz. The high linearity and accurate IQ modulation lead to an error vector magnitude (EVM) of -28 dB under the data rate of 480 Mb/s in WiMedia Mode 1. The entire transmitter consumes 66 mW under supply voltage of 1.2 V.
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A Low-power CMOS Power Amplifier for Ultra wideband (UWB) Applications
S. José, Hyungjin Lee, Dong Sam Ha et al. · 2005 · 59 citations
A 1.1V 3.1-to-9.5GHz MB-OFDM UWB transceiver in 90nm CMOS
Akio Tanaka, Hiroshi Okada, Hiroshi Kodama et al. · 2006 · 55 citations
Engineering, Electrical Engineering, Digital Communication +16