Publication | Closed Access
Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon
37
Citations
13
References
1987
Year
Materials ScienceIon ImplantationEngineeringApplied PhysicsRange ProfilesAmorphous SiliconIon Beam InstrumentationKev IonsIon Emission
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