Annealing effects on electrical properties of LiInSe2

Abstract

The electrical properties of LiInSe2 single crystals are presented. As-grown LiInSe2 crystals have n-type conductivity and high electrical resistivity (1011 W cm at room temperature). Annealing in selenium atmosphere leads to p-type crystals having lower resistivity (105 W cm at room temperature). The origin of donors and acceptors in LiInSe2 are discussed through the annealing study. The energy band gap is estimated from the results of electrical resistivity measurements to be 1.91 eV. The value is supported by the optical transmission. A simple band diagram is proposed consequently.