Doping profiles in Zn-implanted GaAs after laser annealing

Abstract

Differential Hall-effect and sheet-resistivity measurements have been carried out to investigate electrical properties of p-type layers formed by implanting 100-keV Zn ions into Cr-doped semi-insulating GaAs at room temperature and by subsequent laser irradiation (Nd : YAG, λ=1.06 μm) using chemical-vapor-deposited (CVD) Si3N4 films as the encapsulant. It has been shown that very shallow (approximately 0.3 μm) and highly doped (pmax=4×1019 cm−3) p-type GaAs layers can be fabricated by Zn implantation with an ion dose of 1.0×1015 cm−2 followed by laser irradiation at a beam energy density of 1.5 J cm−2.