Journal of Applied Physics · 1979 · 13 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingIii-v SemiconductorsIon ImplantationSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor SurfacesDoping ProfilesElectrical PropertiesElectrical Properties AnalysisEnergy DensityP-type DopingSemiconductor CharacterizationSemiconductor DopingSemiconductor Doping Profiles
Differential Hall-effect and sheet-resistivity measurements have been carried out to investigate electrical properties of p-type layers formed by implanting 100-keV Zn ions into Cr-doped semi-insulating GaAs at room temperature and by subsequent laser irradiation (Nd : YAG, λ=1.06 μm) using chemical-vapor-deposited (CVD) Si3N4 films as the encapsulant. It has been shown that very shallow (approximately 0.3 μm) and highly doped (pmax=4×1019 cm−3) p-type GaAs layers can be fabricated by Zn implantation with an ion dose of 1.0×1015 cm−2 followed by laser irradiation at a beam energy density of 1.5 J cm−2.
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Laser annealing of boron-implanted silicon
R. T. Young, C. W. White, G. J. Clark et al. · Applied Physics Letters · 1978 · 223 citations
Physical and electrical properties of laser-annealed ion-implanted silicon
A. Gat, J. F. Gibbons, T. J. Magee et al. · Applied Physics Letters · 1978 · 173 citations