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Electrical Properties of Pb(Zr,Ti)O<sub> 3</sub> Thin Film Capacitors on Pt and Ir Electrodes
71
Citations
5
References
1995
Year
Materials ScienceMaterials EngineeringElectrical EngineeringPzt Thin FilmsIro 2EngineeringFerroelectric ApplicationNanoelectronicsOxide ElectronicsIr ElectrodesApplied PhysicsPzt FilmsThin Film Process TechnologyThin FilmsElectrical PropertiesThin Film ProcessingElectrochemistry
Pb(Zr x Ti 1- x )O 3 (PZT) thin films were prepared on Ir/IrO 2 and Pt/IrO 2 electrodes. We have already reported that fatigue properties of PZT thin films were improved by using these electrodes due to barrier effects of IrO 2 . In this present paper we describe a study of the imprint characteristics of PZT thin films on these electrodes. There is little difference in fatigue properties between the PZT films on Pt/IrO 2 and Ir/IrO 2 . However, we find some difference in imprint characteristics between the PZT films on these electrodes. In the case of Ir/IrO 2 electrode, improvements in the electrical properties are observed in the measurements of the imprint characteristics. Moreover, improvements in imprint characteristics were also obtained with good (111)-axis orientation of PZT films when Pt x Ir 1- x /IrO 2 electrodes were used.
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