Applied Physics Letters · 2013 · 58 citations · 35 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsInorganic ChemistrySpectroscopyDefect CharacterizationDefectsDefects In Electronic MaterialsEmission SpectroscopyLuminescent MaterialsSemiconductor DefectsCrystal Defects In OxidesDefect CentersDefect-related LuminescenceEmission Spectra AnalysisIntrinsic DefectsOxide Defect StatesOxygen VacanciesPhotoluminescence Spectroscopy
In this Letter, by employing a combination of typical treatments and sensitive defect characterization, we discriminate between the roles of different kinds of intrinsic defects in ZnO. Thereby, we offer convincing experimental evidence that the green luminescence can originate from VO, VZn, and Oi-related defects, corresponding to the 2.48 eV, 2.35 eV, and 2.26 eV emissions, respectively. The green emission peaks are found to be dependent on the relative concentration of these defect centers.
35
Matthew D. McCluskey, S. J. Jokela · Journal of Applied Physics · 2009 · 1.1K citations
Anderson Janotti, Chris G. Van de Walle · Nature Materials · 2006 · 728 citations