A 12-GHz DPDT RF-MEMS Switch with Layer-Wise Waveguide/Actuator Design Technique

Abstract

A novel design of double-pole double-throw (DPDT) RF-MEMS switch for 12-GHz phase shifter has been developed to minimize the electrical crosstalk between the signal waveguide and electrostatic actuator by allocating them in separate layers of an SOI wafer. Compared with the previous other reports, our design can use relatively large area on the chip to accommodate more electrostatic actuator and to have more electrical ground planes. With this newly developed method, silicon RF-MEMS devices will be able to overcome the drawback of solid-state devices in terms of performance, device size, and cost. This paper reports driving voltage of 4 V with the switching speed of 12 microseconds, insertion loss of 3 dB, return loss of 12 dB, isolation of 30 dB at 12 GHz.