Growth Rate and Surface Morphology of Diamond Homoepitaxial Films on Misoriented (001) Substrates

Abstract

Homoepitaxial films were grown on misoriented diamond(001) substrates using microwave plasma-assisted chemical vapor deposition with a methane and hydrogen gas mixture. The dependence of growth rate and surface morphology on methane concentration, substrate temperature and off-angle was investigated. The growth rate dependence was significant for a growth at a high substrate temperature (1000° C) and low methane concentration (1%), suggesting the surface migration distance of the nanometer order. A flat surface was observed macroscopically and microscopically for films grown on off-substrates at a high substrate temperature and low methane concentration.