Publication | Open Access
Semiconductors for organic transistors
853
Citations
156
References
2007
Year
EngineeringOrganic ElectronicsOrganic TransistorsOrganic ChemistrySemiconductor MaterialsOptoelectronic DevicesChemistryOrganic Molecules/polymersSemiconductorsElectronic DevicesAromatic BackbonePhotodetectorsHybrid MaterialsPolymer ChemistryOptoelectronic MaterialsOrganic SemiconductorMolecular EngineeringOrganic MaterialsOrganic Charge-transfer CompoundElectronic MaterialsOrganic Field-effect TransistorsApplied PhysicsConjugated PolymerOptoelectronics
Organic molecules and polymers with π‑conjugated (hetero)aromatic backbones can transport charge and interact efficiently with light, enabling them to function as semiconductors in opto‑electronic devices while organic chemistry allows tailoring functional properties through molecular modifications, opening avenues for inexpensive device manufacturing. This article reviews the fundamental aspects of designing and realizing p‑type (hole‑transporting) and n‑type (electron‑transporting) semiconductors for organic field‑effect transistors (OFETs). An introduction to OFET principles and history, as well as the state‑of‑the‑art organic semiconductor structures and performance of OFETs, is provided.
Organic molecules/polymers with a π-conjugated (hetero)aromatic backbone are capable of transporting charge and interact efficiently with light. Therefore, these systems can act as semiconductors in opto-electronic devices similar to inorganic materials. However, organic chemistry offers tools for tailoring materials' functional properties via modifications of the molecular/monomeric units, opening new possibilities for inexpensive device manufacturing. This article reviews the fundamental aspects behind the structural design/realization of p- (hole transporting) and n-channel (electron-transporting) semiconductors for organic field-effect transistors (OFETs). An introduction to OFET principles and history, as well as of the state-of-the-art organic semiconductor structure and performance of OFETs is provided.
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