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Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy

Materials EngineeringMaterials ScienceElectrical EngineeringAluminium NitrideEngineeringApplied PhysicsGallium OxideSemiconductor MaterialSi-doped N-alx Ga1−xAlloy CompositionMolecular Beam EpitaxyEpitaxial Growth