Highly oriented PbZr0.3Ti0.7O3 thin film on LaNiO3-coated Si substrate derived from a chemical solution technique

A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

Shu-Yau Wu · IEEE Transactions on Electron Devices · 1974 · 421 citations

Engineering, Electrical Engineering, Materials Science +15

Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures

R. Ramesh, W.K. Chan, B. Wilkens et al. · Applied Physics Letters · 1992 · 367 citations

Natural Sciences, Materials Engineering, Materials Science +15

Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon via template growth

R. Ramesh, H. L. Gilchrist, T. Sands et al. · Applied Physics Letters · 1993 · 354 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low-temperature electronic properties of a normal conducting perovskite oxide (LaNiO3)

K. P. Rajeev, G. V. Shivashankar, A. K. Raychaudhuri · Solid State Communications · 1991 · 244 citations

Natural Sciences, Materials Science, Physics +12

Preparation of (100)-oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3

Ching-Chyuan Yang, Ming-Sen Chen, Tian-Jue Hong et al. · Applied Physics Letters · 1995 · 191 citations

Natural Sciences, Materials Engineering, Materials Science +17