Publication | Closed Access
Exciton diamagnetic shifts in self-formed closely stacked InAs/GaAs quantum dots
25
Citations
16
References
1997
Year
EngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsExciton Diamagnetic ShiftsStacked StructureQuantum DotsQuantum MaterialsCompound SemiconductorQuantum SciencePhotoluminescencePhysicsQuantum DeviceOptoelectronic MaterialsExciton Luminescence SpectraApplied PhysicsCondensed Matter PhysicsQuantum DevicesOptoelectronics
We evaluated the temperature dependence of exciton luminescence spectra and exciton diamagnetic shifts in self-formed closely stacked InAs/GaAs quantum dots and compared the results with those measured in the ${\mathrm{In}}_{0.18}$${\mathrm{Ga}}_{0.82}$As/GaAs quantum well. We found multiple-peak emission spectra and small, isotropic diamagnetic shifts in the quantum dots, which present a striking contrast to the quantum well. Based on the quantitative analyses of magneto-optical data, we conclude that the self-formed closely stacked InAs/GaAs quantum dot has an almost spherical quantum-confinement potential inside the stacked structure and that its luminescence is due to three-dimensionally confined excitons.
| Year | Citations | |
|---|---|---|
Page 1
Page 1