Chemical Vapor Deposition · 2001 · 16 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySolid-state ChemistryThin FilmsAluminum OxidesChemical Vapor DepositionInorganic MaterialsInorganic SynthesisOxide SemiconductorsCarrier GasesEnergy Dispersive X-ray SpectroscopyEnergy-dispersive X-ray SpectroscopyPolycrystalline Film GrowthPolycrystalline MaterialsPrecursor ChemistryTransition Metal OxidesX-ray Diffraction Analysis
In2O3 films have been grown on polycrystalline Al2O3 using low-pressure metal–organic (LP-MO) CVD in the temperature range 250–400 °C with the new single-source precursors [Et2InOH·Et2InNH2] (1) and [iPr2InOH·iPr2InNH2] (2), using a purified nitrogen stream as the carrier gas. The preparation and properties of compounds 1 and 2 are reported. X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible (UV-vis) spectroscopy, and energy dispersive X-ray (EDX) spectrometric analyses were used to characterize the films.