Feasibility of hybrid Josephson field effect transistors

Abstract

We consider the feasibility of fabricating planar superconductor-semiconductor-superconductor Josephson junctions in which the junction supercurrent is controlled by a gate electrode isolated from the junction by either a dielectric film (MOS-JOFET) or a Schottky barrier (MES-JOFET). We find that device critical currents between ∼1 and 100 μA and critical temperatures approximately a few K appear possible. We discuss the circuit applications of such devices.