Selective n-type doping in graphene via the aluminium nanoparticle decoration approach

Abstract

A simple and effective technique is presented to left shift the Dirac point of graphene transistors to induce n-type doping <italic>via</italic> the thermal decoration of Al nanoparticles. The versatility of this approach is illustrated by the fabrication of air-stable n-type doping in graphene devices with the improved on/off current ratio.