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Chemically Induced Charge Redistribution at Al-GaAs Interfaces
132
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1979
Year
SemiconductorsExchange ReactionAluminium NitrideCharge ExcitationsMicroscopic InterfaceEngineeringPhysicsApplied PhysicsQuantum MaterialsCondensed Matter PhysicsInduced Charge RedistributionSemiconductor MaterialCharge Carrier TransportCharge TransportSolid-state PhysicCharge Redistribution
We show that the exchange reaction between Al and GaAs at the microscopic interface produces a charge redistribution in two stages which determines Schottky-barrier formation.Received 6 October 1978DOI:https://doi.org/10.1103/PhysRevLett.42.397©1979 American Physical Society
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