Hole transport in boron delta-doped diamond structures

Abstract

The temperature dependence of the hole sheet density and mobility of four capped delta boron doped [100]-oriented epilayers has been investigated experimentally and theoretically over a large temperature range (6 K<T<500 K). The influence of the parallel conduction through the thick buffer layer overgrown on the diamond substrate was shown not to be negligible near room temperature. This could lead to erroneous estimates of the hole mobility in the delta layer. None of the delta-layers studied showed any quantum confinement enhancement of the mobility, even the one which was thinner than 2 nm.