High responsitivity intrinsic photoconductors based on Al<i>x</i>Ga1−<i>x</i>N

Abstract

This letter reports on the fabrication and characterization of visible-blind ultraviolet photoconductors using single-crystal AlxGa1−xN layers deposited on basal plane sapphire substrates. With aluminum mole fractions ranging from 5% to 61%, the long-wavelength cutoff can be varied from 350 to 240 nm. Photoresponsitivities as high as several hundred amperes per watt were measured with 10 μm interelectrode spacing.