Misfit dislocation structure at a Si/Si<i>x</i>Ge1−<i>x</i> strained-layer interface

Abstract

The misfit dislocation structure at a Si/Si0.75Ge0.25 strained-layer interface has been characterized by transmission electron microscopy. Through weak-beam imaging it is found that partial dislocation in the form of extended nodes exist in the misfit dislocation network. The density of nodes as observed by microscopy compares favorably with the estimate of the density of charged interface states derived from capacitance-voltage measurements.