Calculation of Carrier Concentration in Polycrystalline Films as a Function of Surface Acceptor State Density: Application for ZnO Gas Sensors

D. J. Leary, James O. Barnes, A.G. Jordan

Journal of The Electrochemical Society · 1982 · 43 citations · 0 references

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Abstract

An analysis employing Poisson's equation is used to determine surface potential and effective carrier concentration as a function of N/sub ss/, the surface acceptor concentration, for a particular set of material parameters in RF- sputtered ZnO thin films. The results are used to obtain a semiquantitative description of gas sensitivity addressing electronic processes of the gas-solid system. The analysis involves numerical solution of Poisson's equation and the charge neutrality equation simultaneously. 8 refs.