Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates - Concepedia

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Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates

27

Citations

22

References

2006

Year

Karl Engl, Max Beer, N. Gmeinwieser, Ulrich T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, A. Miler, H.‐J. Lugauer, G. Brüderl,

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringSurface ScienceApplied PhysicsAluminum Gallium NitrideAlgan LayersSitu-deposited Intermediate LayerGan Power DeviceSic Substrates

References

	Year	Citations

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