Electronics Letters · 1993 · 91 citations · 0 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesElectron ConfigurationsMemory DevicesNanoelectronicsMemory Circuit DesignMemory CircuitsNon-volatile Memory Design
A single-electron memory cell, in which one bit of information is represented by +n and −n electron number states, is described. An experimental memory circuit for n ≃100 was fabricated and the basic operation was confirmed at a temperature of 30 mK. This structure can be modified to operate with n = 1.