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Single-electron memory
91
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0
References
1993
Year
Electrical EngineeringElectronic DevicesSingle-electron Memory CellEngineeringElectronic MemoryEmerging Memory TechnologyApplied PhysicsSynchronous DesignQuantum SwitchesMemory DeviceMemory DevicesNumber StatesSemiconductor MemoryMicroelectronicsQuantum ElectronicsQuantum EngineeringExperimental Memory Circuit
A single-electron memory cell, in which one bit of information is represented by +n and −n electron number states, is described. An experimental memory circuit for n ≃100 was fabricated and the basic operation was confirmed at a temperature of 30 mK. This structure can be modified to operate with n = 1.