Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistors Using a Pt/SrBi₂Ta₂O₉/Y₂O₃/Si Structure

Abstract

For the fabrication of metal/ferroelectric/insulator/semiconductor field effect transistors (MEFISFETs), SrBi 2 Ta 2 O 9 (SBT) film was formed onto Y 2 O 3 layer using the metal organic deposition (MOD) method. Memory windows of MEFISFET were in the range of 0.96–1.38 V when the gate voltage varied from 5 to 7 V. Current-voltage characteristic and transconductance curve of the MEFISFET show the effective gate modulation and the stable memory effect induced by the ferroelectric properties.