Radiation dose measurment using MOSFETs

Abstract

The MOS transistor as a radiation dose detector has been presented. MOS transistors present advantages such as low cost, small volume and weight, robustness, accuracy, large measurable dose range, and sensitivity to low-energy radiation (10 keV). They are useful in real-time measurements or post-irradiation read-out, while they retain information after reading. The sensitivity of unbiased MOSFETs has been improved, and further improvement is possible by increasing the oxide thickness via dual dielectrics or by using ion-implanted oxides and stacked MOSFET configurations. The stacked-transistor configuration is a very promising solution to reach the mRad range (personnel dosimetry). MOSFETs are already used in various application fields with increasing interest for use in specific cases of in-vivo dosimetry.