High-power SLM operation of 1.3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on <i>p</i> -type InP substrate

Abstract

A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.