Uniform-carrier-concentration <i>p</i>-type layers in GaAs produced by beryllium ion implantation

Abstract

Multiple-energy Be+ ion implantation has been used to create uniform-carrier-concentration p-type layers (≳1.5 μm thick) in GaAs. The implanted samples were annealed at 900 °C using pyrolytic Si3N4 as an encapsulant. High activation of the implanted Be was observed. On samples with implanted hole concentrations of 2×1018/cm3, the measured carrier concentration as a function of depth is in good agreement with that expected from LSS range theory. For higher doses, diffusion of the implanted Be was observed. p+n−n+ junctions formed by implantation into undoped epitaxial material have low leakage currents and sharp breakdowns at average electric fields in the n− region of 1.5×105 V/cm.