CMOS millimeter wave phase shifter based on tunable transmission lines

Abstract

This paper presents a tunable transmission line (t-line) structure, featuring independent control of line inductance and capacitance. The t-line provides variable delay while maintaining relatively constant characteristic impedance using direct digital control through FET switches. As an application of this original structure, a 60 GHz RF-phase shifter for phased-array applications is implemented in a 32 nm SOI process attaining state-of-the-art performance. Measured data from two phase shifter variants at 60 GHz showed phase changes of 175° and 185°, S21 losses of 3.5-7.1 dB and 6.1-7.6 dB, RMS phase errors of 2° and 3.2°, and areas of 0.073 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 0.099 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> respectively.