Perfect Crystal Growth of Silicon by Vapor Deposition

Abstract

Investigations have been made of the compensation effect of lattice strain on silicon epitaxially grown by the simultaneous doping of tin and phosphorus. The stress induced by doping of phosphorus with a concentration of is compensated by the simultaneous doping of phosphorus and tin . The generation of misfit dislocations is also restrained by the simultaneous doping of phosphorus and tin. The difference in the effective lattice constants of epitaxial films and substrates is measured by an x‐ray double crystal spectrometer using the asymmetric Bragg reflection. The difference can be eliminated by proper doping of tin and nearly perfect, highly doped crystal films can be grown on high‐resistivity silicon.