IEEE Electron Device Letters · 1991 · 49 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor HeterostructuresSemiconductor PhysicsCurrent GainCutoff FrequencyGain EnhancementHeterojunction Bipolar TransistorsHigh-frequency ElectronicsMetalorganic Chemical Vapor DepositionMicrowave DevicesRadio-frequency Devices
Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Varying the device structures allows the current gain to reach over 300 in structures with a base doping of 2*10/sup 19 /cm/sup -3/. A static divide-by-four divider implemented with C-doped base HBTs has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBTs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
8
Carbon doping of III–V compounds grown by MOMBE
C. R. Abernathy, S. J. Pearton, F. Ren et al. · Journal of Crystal Growth · 1990 · 112 citations
Brian T. Cunningham, G. E. Stillman, Gordon Jackson · Applied Physics Letters · 1990 · 59 citations