Self‐Assembled Nanowires of Organic n‐Type Semiconductor for Nonvolatile Transistor Memory Devices

Abstract

Abstract Organic nonvolatile transistor‐type memory (ONVM) devices are developed using self‐assembled nanowires of n‐type semiconductor, N , N ′‐bis(2‐phenylethyl)‐perylene‐3,4:9,10‐tetracarboxylic diimide (BPE‐PTCDI). The effects of nanowire dimension and silane surface treatment on the memory characteristics are explored. The diameter of the nanowires is reduced by increasing the non‐solvent methanol composition, which led to the enhanced crystallinity and high field‐effect mobility. The BPE‐PTCDI nanowires with small diameters induce high electrical fields and result in a large memory window (the shifting of the threshold voltage, Δ V th ). The Δ V th value of BPE‐PTCDI nanowire based ONVM device on the bare substrate can reach 51 V, which is significantly larger than that of thin film. The memory window is further enhanced to 78 V with the on/off ratio of 2.1 × 10 4 and the long retention time (10 4 s), using a hydrophobic surface (such as trichloro(phenyl)silane‐treated surface). The above results demonstrate that the n‐type semiconducting nanowires have potential applications in high performance non‐volatile transistor memory devices.