Applied Physics Letters · 2007 · 80 citations · 18 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsPhotonicsLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsOrganic SemiconductorsPhotodetectorsUpconversion MaterialsExternal Quantum EfficiencyHybrid Optoelectronic MaterialsInorganic-organic HybridsIntegrated PhotodetectorsInterfacial Electronic StructureInterfacial StructureOrganic Light-emitting DiodesOrganic Photodetectors
The authors report a hybrid organic/inorganic optical upconversion device that converts 1.5μm infrared light to ∼520nm visible light. The device was made by direct tandem integration of an inorganic InGaAs∕InP photodetector with an organic light-emitting diode (OLED). Optical upconversion with an external efficiency of 0.7% W/W at room temperature has been achieved. Interfacial structure at the inorganic-organic interface was found to play a vital role in enabling the integration of the hybrid tandem upconverter. Both sulfur-terminated InP surface and nanocarbon fullerene interlayer were found crucial to form a good interface contact, permitting continuous flow of photocarriers from the inorganic detector into the OLED.
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Organic electroluminescent diodes
Chak Wah Tang, S. A. VanSlyke · Applied Physics Letters · 1987 · 14.3K citations
Natural Sciences, Materials Engineering, Materials Science +17
Molecular-scale interface engineering for polymer light-emitting diodes
Peter K. H. Ho, Ji‐Seon Kim, J. H. Burroughes et al. · Nature · 2000 · 766 citations
Natural Sciences, Materials Engineering, Materials Science +14
S-passivated InP (100)-(1×1) surface prepared by a wet chemical process
A. Yelon, E. Sacher, Zhaoming Lu et al. · Applied Physics Letters · 1992 · 121 citations
Natural Sciences, Materials Engineering, Materials Science +17
Structure of S-passivated InP(100)-(1×1) surface
Zhaoming Lu, M. J. Graham, X. H. Feng et al. · Applied Physics Letters · 1992 · 59 citations
Natural Sciences, Materials Engineering, Materials Science +15