IEEE Electron Device Letters · 1986 · 42 citations · 4 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingMetal-oxide-semiconductor Field-effect TransistorsCrowding PhenomenonCurrent CrowdingGate-dependent Current-voltage Behavior
A gate probe method has been developed to accurately determine source, drain, and channel resistances of MESFET's. The method employs the gate current crowding phenomenon at higher drain currents. An exact equation was derived for the resistances whose fit to the data provides a self-consistent check of the determined parameters.
4
Models for contacts to planar devices
Microelectronics Reliability · 1972 · 818 citations
Engineering, Electrical Engineering, Electronic Materials +5