Structure and recombination properties of extended defects in the dislocation slip plane in silicon

Abstract

Abstract It is shown, that moving 60° dislocations in Si as well as in SiGe generate high density of extended defects in their slip plane. As a result, the plastic deformation introduces in the crystal volume in addition to the dislocations a very dense system of extended defects, spatially separated from dislocations. The EBIC imaging revealed strong recombination contrast associated with these extended defects. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)