Corundum Structure Oxides Studied by XPS

Abstract

The electronic structure behaviour of Me2O3 oxides (Me = Ti, V, Cr) has been determined from XPS valence band and core level measurements. From Ti to Cr sesquioxide the relative intensity of the 3d band increases systematically which can be explained by the (atomic) photoelectric cross section and the number of 3d electrons. Simultaneously the 3d-2p band separation decreases indicating a more stronger band overlap equivalent an enhanced covalent bonding component. The different electrical properties among the corundum structure oxides are determined by the trigonal field splitted a1g and eg orbitals, their occupation and relative energy position at the Fermi level. The observations confirm the change from itinerant to more localized behaviour of d electrons caused by crystal structure parameter change (c/a ratio).